ENERGY-BAND LINEUP AT THE POROUS-SILICON SILICON HETEROINTERFACE MEASURED BY ELECTRON-SPECTROSCOPY

被引：36

作者：

HAO, PH ^{[1
]}

HOU, XY ^{[1
]}

ZHANG, FL ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 26期

关键词：

D O I：

10.1063/1.111212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy band gap of light-emitting porous silicon is determined by high-resolution electron energy loss spectroscopy, and the valence band edge of porous silicon with respect to its Fermi level is measured by ultraviolet photoelectron spectroscopy. By combining the results with that measured from clean Si, a picture of band lineup at the porous-silicon/p-Si heterointerface is proposed, in which 70% of the total band gap discontinuity occurs at the valence band edge.

引用

页码：3602 / 3604

页数：3

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