PHOTOELECTRON-SPECTROSCOPY MEASUREMENTS OF THE BAND-GAP IN POROUS SILICON

被引：80

作者：

VANBUUREN, T

TIEDJE, T

DAHN, JR

WAY, BM

机构：

[1] UNIV BRITISH COLUMBIA,DEPT ELECT ENGN,VANCOUVER V6T 1W5,BC,CANADA

[2] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110270

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoemission and x-ray absorption spectroscopy show that both the conduction and valence bands of porous silicon are shifted relative to the bands for bulk silicon, as expected in the quantum confinement model for the optical properties of porous silicon. The shift in the valence band is larger than the shift in the conduction band and proportional to it, with a proportionality constant that is consistent with effective mass theory. No oxygen is detected in the as-prepared porous silicon.

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页码：2911 / 2913

页数：3

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