OPTICAL-ABSORPTION EVIDENCE OF A QUANTUM SIZE EFFECT IN POROUS SILICON

被引:163
作者
SAGNES, I [1 ]
HALIMAOUI, A [1 ]
VINCENT, G [1 ]
BADOZ, PA [1 ]
机构
[1] UNIV JOSEPH FOURIER,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1063/1.108773
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study presents optical transmission measurements performed on free-standing homogeneous porous silicon (PS) films of different porosities and substrate doping levels. The absorption coefficient curves deduced from these measurements, taking into account the total quantity of matter in the PS film, exhibit significant blue shift (up to 500 meV). These shifts, well correlated with the crystallite size variations with porosity and substrate doping observed by electron microscopy and gas adsorption experiments, are attributed to quantum size effects in the silicon microcrystallites.
引用
收藏
页码:1155 / 1157
页数:3
相关论文
共 21 条
  • [1] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY
    ASPNES, DE
    THEETEN, JB
    [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302
  • [2] X-RAY TOPOGRAPHIC CHARACTERIZATION OF POROUS SILICON LAYERS
    BARLA, K
    BOMCHIL, G
    HERINO, R
    PFISTER, JC
    BARUCHEL, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) : 721 - 726
  • [3] STUDIES OF COHERENT AND DIFFUSE-X-RAY SCATTERING BY POROUS SILICON
    BELLET, D
    DOLINO, G
    LIGEON, M
    BLANC, P
    KRISCH, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 145 - 149
  • [4] Bomchil G., 1988, Microelectronic Engineering, V8, P293, DOI 10.1016/0167-9317(88)90022-6
  • [5] BOMCHIL G, UNPUB
  • [6] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
    BRANDT, MS
    FUCHS, HD
    STUTZMANN, M
    WEBER, J
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1992, 81 (04) : 307 - 312
  • [7] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [8] ATMOSPHERIC IMPREGNATION OF POROUS SILICON AT ROOM-TEMPERATURE
    CANHAM, LT
    HOULTON, MR
    LEONG, WY
    PICKERING, C
    KEEN, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) : 422 - 431
  • [9] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H
    FURUKAWA, S
    MIYASATO, T
    [J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5726 - 5729
  • [10] ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS
    HALIMAOUI, A
    OULES, C
    BOMCHIL, G
    BSIESY, A
    GASPARD, F
    HERINO, R
    LIGEON, M
    MULLER, F
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (03) : 304 - 306