High Tc dc SQUID utilizing bicrystal junctions with 30 degree misorientation angle

被引：12

作者：

Enpuku, K ^{[1
]}

Minotani, T ^{[1
]}

Shiraishi, F ^{[1
]}

Kandori, A ^{[1
]}

Kawakami, S ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect Device Engn, Fukuoka 8128581, Japan

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/77.783687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performances of high T-c, de SQUID utililing bicrystal junctions with 30 degrees misorientation angle have been studied. Junction resistance R-s,= 10 Omega and critical current I-0,= 10-20 mu A can be obtained rather easily at T=77 K with this technology. As a result, voltage modulation depth as high as 50 mu V, and nux noise as low as 5 mu Phi/Hz(1/2) are obtained for the 100pH-SQUID. The measured values of the voltage modulation depth agree reasonably web with the numerical simulation, while the measured values of the nux noise are about 2 or 3 times larger than the simulation. The reason for the high noise level is discussed by taking into account imperfection of junctions.

引用

页码：3109 / 3112

页数：4

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