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Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering

被引：68
作者：
Hiramatsu, H
Orita, M
Hirano, M
Ueda, K
Hosono, H
机构：
[1] Japan Sci & Technol Corp, ERATO, Hosono Transparent Electroact Mat TEAM Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 11期
关键词：
D O I：
10.1063/1.1473667
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of wide-gap p-type (LaO)CuS were prepared by rf sputtering followed by postannealing. Undoped (LaO)CuS films are electrically insulating and emit ultraviolet (UV) light arising from excitons at room temperature upon photoexcitation. The hole carrier concentration in the film was controlled in the range similar to10(15) to similar to10(20) cm(-3) by doping Sr2+ ions to replace La3+. The hole concentration reached a maximum of 2.7x10(20) cm(-3) at a doping level of 3 at. % Sr2+ ions, and then the carrier generation efficiency was similar to50%. These results demonstrate that the (La1-xSrxO)CuS films are potentially applicable to optoelectronic devices operating at short wavelengths because a transparent p electrode, as well as UV-emitting layers, may be fabricated using this material by controlling the doping level. (C) 2002 American Institute of Physics.
引用
收藏
页码：9177 / 9181
页数：5
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