Infrared reflection spectroscopy of Zn2SnO4 thin films deposited on silica substrate by radio frequency magnetron sputtering

被引：26

作者：

Nikolic, M. V. ^{[1
]}

Satoh, K. ^{[2
]}

Ivetic, T. ^{[3
]}

Paraskevopoulos, K. M. ^{[4
]}

Zorba, T. T. ^{[4
]}

Blagojevic, V. ^{[5
]}

Mancic, L. ^{[3
]}

Nikohic, P. M. ^{[3
]}

机构：

[1] Inst Multidisciplinary Res, Belgrade 11000, Serbia

[2] Technol Res Inst Osaka Prefecture, Izumi Ku, Osaka 5941157, Japan

[3] Inst Tech Sci SASA, Belgrade 11000, Serbia

[4] Aristotle Univ Thessaloniki, Dept Phys, Solid State Sect, Thessaloniki 52124, Greece

[5] Univ Belgrade, Fac Elect Engn, Belgrade 11000, Serbia

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 18期

关键词：

zinc-stannate; Fourier transform infrared spectroscopy; optical properties; sputtering; X-ray diffraction; Rietveld analysis;

D O I：

10.1016/j.tsf.2007.12.118

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-phase zinc-stannate thin films of different thickness values were prepared by radio frequency magnetron sputtering on a silica substrate. Rietveld analysis of X-ray diffraction data confirmed that the films had an inverse spinel structure, with a cation inversion parameter of 0.8. Room temperature far and mid infrared reflectivity spectra were measured in the range 50-4000 cm(-1). The reflectivity diagrams were analyzed using the four-parameter model of coupled oscillators for optical phonons with a standard multi-layer technique taking into account the thin-film layer and the substrate. The optical parameters were determined for seven oscillators belonging to the spinel structure. Their origin was discussed in relation to non-stoichiometry of the thin film and cation disorder in the crystal lattice. Bom effective charges were calculated from the transversal/ longitudinal splitting. (c) 2007 Elsevier B.V All rights reserved.

引用

页码：6293 / 6299

页数：7

共 38 条

[11] QUANTITATIVE-ANALYSIS OF THE EFFECT OF DISORDER-INDUCED MODE-COUPLING ON INFRARED-ABSORPTION IN SILICA [J].