Bottomless complexity of core structure and kink mechanisms of dislocation motion in silicon

被引：12

作者：

Bulatov, VV ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

SCRIPTA MATERIALIA | 2001年 / 45卷 / 11期

关键词：

elemental semiconductors; theory and modeling; lattice defects; dislocation mobility;

D O I：

10.1016/S1359-6462(01)01157-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dislocation core is imperfect and populated by a variety of zero-dimensional defect species-kinks, reconstruction defects, core vacancies, etc,, and their combinations. Structural origin of such a rich spectrum of core excitations and its possible contribution to dislocation behavior under stress is the topic of this contribution. (C) 2001 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：1247 / 1252

页数：6

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