DISLOCATION CORE STUDIES IN EMPIRICAL SILICON MODELS

被引：65

作者：

DUESBERY, MS

JOOS, B

MICHEL, DJ

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] UNIV OTTAWA,OTTAWA CARLETON INST PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.5143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several modern empirical potentials for silicon are used to calculate the configurations and energies of dislocation cores and their mobility-related excitations. The degree of consistency with experiment is found to vary systematically with the magnitude of the defect distortion. The results suggest that the distorted structures encountered with this important class of defects should be incorporated into the construction of the potentials.

引用

页码：5143 / 5146

页数：4

共 42 条

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