30-DEGREE PARTIAL DISLOCATIONS IN SILICON - ABSENCE OF ELECTRICALLY ACTIVE STATES

被引：49

作者：

CHELIKOWSKY, JR

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.49.1569

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1569 / 1572

页数：4

共 20 条

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