THE NATURE OF DANGLING BONDS AT LINE DEFECTS IN COVALENT SEMICONDUCTORS

被引：9

作者：

KIRTON, MJ

JAROS, M

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 15期

关键词：

D O I：

10.1088/0022-3719/14/15/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2099 / 2115

页数：17

共 26 条

[1] Appelbaum J.A., 1974, PHYSICS SEMICONDUCTO, P675
[2] ELECTRONIC-STRUCTURE OF SOLID-SURFACES
APPELBAUM, JA
HAMANN, DR
[J]. REVIEWS OF MODERN PHYSICS, 1976, 48 (03) : 479 - 496
[3] SI (100) SURFACE - THEORETICAL-STUDY OF UNRECONSTRUCTED SURFACE
APPELBAUM, JA
BARAFF, GA
HAMANN, DR
[J]. PHYSICAL REVIEW B, 1975, 11 (10): : 3822 - 3831
[4] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM
BARAFF, GA
KANE, EO
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959
[5] BARRAFF GA, 1979, PHYS REV B, V19, P4965
[6] BARRAFF GA, 1978, PHYS REV LETT, V41, P892
[7] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON
BERNHOLC, J
LIPARI, NO
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 895 - 899
[8] DEFECT STATES DOMINATED BY LOCALIZED POTENTIALS IN SEMICONDUCTORS
BRAND, S
JAROS, M
RODRIGUEZ, CO
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (09): : 1243 - 1253
[9] DISSOCIATION OF NEAR-SCREW DISLOCATIONS IN GERMANIUM AND SILICON
GOMEZ, A
COCKAYNE, DJ
HIRSCH, PB
VITEK, V
[J]. PHILOSOPHICAL MAGAZINE, 1975, 31 (01): : 105 - 113
[10] EXTENDED DISLOCATIONS IN GERMANIUM
HAUSSERM.F
SCHAUMBU.H
[J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (03): : 745 - 751