DEFECT STATES DOMINATED BY LOCALIZED POTENTIALS IN SEMICONDUCTORS

被引:7
作者
BRAND, S
JAROS, M
RODRIGUEZ, CO
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 09期
关键词
D O I
10.1088/0022-3719/14/9/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1243 / 1253
页数:11
相关论文
共 13 条
  • [1] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS
    BARAFF, GA
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979
  • [2] SIMPLE PARAMETRIZED MODEL FOR JAHN-TELLER SYSTEMS - VACANCY IN P-TYPE SILICON
    BARAFF, GA
    KANE, EO
    SCHLUTER, M
    [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3563 - 3570
  • [3] SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM
    BARAFF, GA
    KANE, EO
    SCHLUTER, M
    [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (13) : 956 - 959
  • [4] BARAFF GA, 1979, DEFECTS RAD EFFECTS, P168
  • [5] BAND STRUCTURE AND IMPURITY STATES
    BASSANI, F
    IADONISI, G
    PREZIOSI, B
    [J]. PHYSICAL REVIEW, 1969, 186 (03): : 735 - &
  • [6] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON
    BERNHOLC, J
    LIPARI, NO
    PANTELIDES, ST
    [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 895 - 899
  • [7] OPTIMIZATION STUDIES OF LOCALIZED DEFECT CALCULATIONS IN SEMICONDUCTORS
    BRAND, S
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (24): : 4963 - 4973
  • [8] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
    JAROS, M
    BRAND, S
    [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
  • [9] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION OF ELECTRONIC STATES ASSOCIATED WITH A RECONSTRUCTED SILICON VACANCY
    JAROS, M
    RODRIGUEZ, CO
    BRAND, S
    [J]. PHYSICAL REVIEW B, 1979, 19 (06): : 3137 - 3151
  • [10] 2-ELECTRON IMPURITY STATES IN GAP - O
    JAROS, M
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462