OPTIMIZATION STUDIES OF LOCALIZED DEFECT CALCULATIONS IN SEMICONDUCTORS

[1] BAND STRUCTURE AND IMPURITY STATES [J]. PHYSICAL REVIEW, 1969, 186 (03): : 735 - &

[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[3] LOCALIZED DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +

[4] ELECTRONIC-STRUCTURE OF SILICON [J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5095 - 5107

[5] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[7] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505

[8] LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (23): : L550 - L553

[9] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762

[10] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (23): : 3451 - 3456

[1] BAND STRUCTURE AND IMPURITY STATES [J]. PHYSICAL REVIEW, 1969, 186 (03): : 735 - &

[2] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[3] LOCALIZED DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 156 (03): : 860 - +

[4] ELECTRONIC-STRUCTURE OF SILICON [J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5095 - 5107

[5] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[6] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[7] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505

[8] LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (23): : L550 - L553

[9] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762

[10] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (23): : 3451 - 3456