LOCALIZED ELECTRON STATES ASSOCIATED WITH GA-VACANCY AND AS-VACANCY IN GAAS

被引：15

作者：

JAROS, M ^{[1
]}

机构：

[1] UNIV NEWCASTLE TYNE,DEPT THEORET PHYS,NEWCASTLE TYNE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 23期

关键词：

D O I：

10.1088/0022-3719/8/23/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L550 / L553

页数：4

共 5 条

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COULSON, CA
KEARSLEY, MJ
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[3] 2-ELECTRON IMPURITY STATES IN GAP - O
JAROS, M
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462
[4] MOLECULAR-ORBITAL TREATMENT FOR DEEP LEVELS IN SEMICONDUCTORS - SUBSTITUTIONAL NITROGEN AND LATTICE VACANCY IN DIAMOND
MESSMER, RP
WATKINS, GD
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2568 - 2590
[5] LOCALIZED DEFECTS IN PBTE
PARADA, NJ
[J]. PHYSICAL REVIEW B, 1971, 3 (06): : 2042 - &