DISLOCATION CORE STUDIES IN EMPIRICAL SILICON MODELS

被引：65

作者：

DUESBERY, MS

JOOS, B

MICHEL, DJ

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD 20742

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] UNIV OTTAWA,OTTAWA CARLETON INST PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.43.5143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several modern empirical potentials for silicon are used to calculate the configurations and energies of dislocation cores and their mobility-related excitations. The degree of consistency with experiment is found to vary systematically with the magnitude of the defect distortion. The results suggest that the distorted structures encountered with this important class of defects should be incorporated into the construction of the potentials.

引用

页码：5143 / 5146

页数：4

共 42 条

[21] THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION
JONES, R
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 213 - 219
[22] THEORETICAL CALCULATIONS OF ELECTRON-STATES ASSOCIATED WITH DISLOCATIONS
JONES, R
[J]. JOURNAL DE PHYSIQUE, 1979, 40 : 33 - 38
[23] NEW CLASSICAL POTENTIAL FOR ACCURATE SIMULATION OF ATOMIC PROCESSES IN SI
KAXIRAS, E
PANDEY, KC
[J]. PHYSICAL REVIEW B, 1988, 38 (17): : 12736 - 12739
[24] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE
KEATING, PN
[J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &
[25] DISLOCATION MODEL OF AMORPHOUS-GERMANIUM
KOIZUMI, H
NINOMIYA, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (03) : 898 - 904
[26] Labusch R., 1980, Dislocations in solids, vol.5. Other effects of dislocations: disclinations, P127
[27] LAPICCIRELLA A, 1981, I PHYS C SER, V60, P51
[28] LODGE KW, 1983, I PHYS C SR, V67, P55
[29] DISLOCATION CORES IN SEMICONDUCTORS - FROM THE SHUFFLE OR GLIDE DISPUTE TO THE GLIDE AND SHUFFLE PARTNERSHIP
LOUCHET, F
THIBAULTDESSEAUX, J
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (04): : 207 - 219
[30] ON THE CORE STRUCTURE OF THE GLIDE-SET 9-DEGREES AND 3-DEGREES PARTIAL DISLOCATIONS IN SILICON
MARKLUND, S
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 77 - 85

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