THE STRUCTURE OF KINKS ON THE 90-DEGREES PARTIAL IN SILICON AND A STRAINED-BOND MODEL FOR DISLOCATION-MOTION

被引：93

作者：

JONES, R ^{[1
]}

机构：

[1] UMEA UNIV,DEPT THEORET PHYS,S-90187 UMEA,SWEDEN

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 42卷 / 02期

关键词：

D O I：

10.1080/01418638008227280

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：213 / 219

页数：7

共 20 条

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[J]. JOURNAL DE PHYSIQUE, 1979, 40 : 33 - 38