Biexcitons in the semiconductor Cu2O:: An explanation of the rapid decay of excitons -: art. no. 241201

被引:21
作者
Jang, JI
Wolfe, JP
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 24期
关键词
D O I
10.1103/PhysRevB.72.241201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Excitons in the semiconductor Cu2O exhibit a puzzling density-dependent lifetime that severely limits the attainable gas density. Our previous experimental work on this nearly ideal gas points to an anomalously strong Auger recombination process. The observed exciton decay rate is over five orders of magnitude larger than present theoretical estimates indicate for this crystal. Based on time- and space-resolved photoluminescence studies, we propose that the exciton densities are limited by their binding into short-lived excitonic molecules.
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