Carrier transfer and capture into quantum wire arrays grown on V-groove substrates

被引:4
作者
Haacke, S
Hartig, M
Oberli, DY
Deveaud, B
Kapon, E
Marti, U
Reinhart, FK
机构
[1] Inst. of Micro- and Optoelectronics, Department of Physics, Swiss Fed. Institute of Technology
关键词
D O I
10.1016/0038-1101(95)00315-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mechanisms of carrier transfer from barrier regions (superlattices, side-wall and vertical quantum wells) into arrays of quantum wires are investigated by time-resolved photoluminescence. The wires are grown by different techniques on V-groove substrates. The transfer times range from 25 to 900 ps, depending on the details of the whole structure. The fast carrier transfer is modeled by a diffusion equation which allows one to estimate the quantum mechanical capture time from a two-dimensional vertical QW into a one-dimensional QWR to be <2ps.
引用
收藏
页码:299 / 302
页数:4
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