Substrate-orientation dependence on structure and magnetic properties of MnAs epitaxial layers

被引:24
作者
Morishita, Y
Iida, K
Abe, J
Sato, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8B期
关键词
MnAs; molecular beam epitaxy; reflection high-energy electron diffraction; x-ray diffraction; polar magneto-optical Kerr-effect;
D O I
10.1143/JJAP.36.L1100
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ferromagnetic MnAs layers were grown on (001), (111)A, and (111)B GaAs substrates by molecular-beam epitaxy at substrate temperatures (T-s) in the range from 150 to 400 degrees C. The crystal structure of the MnAs was NiAs type and its orientation was found to change depending on the substrate, (<(1)over bar 101>) for the (001) GaAs substrate and (0001) for the (111)A and (111)B substrates at T-s between 300 and 400 degrees C. Polar magneto-optical Kerr-effect measurement demonstrated a crystal-orientation dependence of Kerr rotation and Kerr ellipticity spectra of the MnAs epitaxial layers.
引用
收藏
页码:L1100 / L1103
页数:4
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