Intrinsic origin of electron mobility reduction in high-k MOSFETs - From remote phonon to bottom interface dipole scattering

被引：52

作者：

Ota, Hiroyuki ^{[1
,3
]}

Hirano, Akito ^{[1
,2
]}

Watanabe, Yukimune ^{[1
,2
]}

Yasuda, Naoki ^{[1
,2
]}

Iwamoto, Kunihiko ^{[1
,2
]}

Akiyama, Koji ^{[1
,2
]}

Okada, Kenji ^{[1
,2
]}

Migita, Shinji ^{[1
]}

Nabatame, Toshihide ^{[1
,2
]}

Toriumi, Akira ^{[1
,3
]}

机构：

[1] AIST, MIRAI ASRC, West 7,16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

[2] MIRAI ASET, Tsukuba, Ibaraki, Japan

[3] Univ Tokyo, Tokyo, Japan

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418864

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the mobility degradation at low fields is predominantly due to a dipole layer intrinsically formed at the HfO2/SiO2 interface. This dipole layer is also responsible for the anomalous V-FB (V-TH) shift in high-k MOSFETs. Contribution of remote phonon scattering to the mobility degradation is very little, as revealed by comparing the mobility behaviors for MOSFETs with different crystal symmetry of HfO2 dielectrics.

引用

页码：65 / +

页数：3

共 12 条

[1] High-κ/metal-gate stack and its MOSFET characteristics [J].

Chau, R ;

Datta, S ;

Doczy, M ;

Doyle, B ;

Kavalieros, J ;

Metz, M .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) :408-410

[2] Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering [J].

Fischetti, MV ;

Neumayer, DA ;

Cartier, EA .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4587-4608

[3] Cubic-tetragonal phase change of yttria-doped hafnia solid solution: high-resolution X-ray diffraction and Raman scattering [J].

Fujimori, H ;

Yashima, M ;

Sasaki, S ;

Kakihana, M ;

Mori, T ;

Tanaka, M ;

Yoshimura, M .

CHEMICAL PHYSICS LETTERS, 2001, 346 (3-4) :217-223

[4]

Iwamoto K, 2007, 2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P70

[5] Dipole scattering in polarization induced III-V nitride two-dimensional electron gases [J].

Jena, D ;

Gossard, AC ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (08) :4734-4738

[6]

KAMIMUTA Y, 2007, IEDM IN PRESS

[7]

Nabatame T., 2003, S VLSI TECH, P25

[8]

REN Z, 2003, IEDM, P793

[9] Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3/SiO2 gate stacks -: art. no. 113706 [J].

Saito, S ;

Torii, K ;

Shimamoto, Y ;

Tonomura, O ;

Hisamoto, D ;

Onai, T ;

Hiratani, M ;

Kimura, S ;

Manabe, Y ;

Caymax, M ;

Maes, JW .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)

[10]

SAITO S, 2002, SSDM, P704

← 1 2 →