Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots

被引：158

作者：

Sun, CK

Wang, G

Bowers, JE

Brar, B

Blank, HR

Kroemer, H

Pilkuhn, MH

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

[2] UNIV STUTTGART,INST PHYS,W-7000 STUTTGART,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.115693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self-assembly process. Time-resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band-bending model. (C) 1996 American Institute of Physics.

引用

页码：1543 / 1545

页数：3

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