Degradation of 6H-SiC MOS capacitors operated at high temperatures

被引：14

作者：

Bassler, M

Afanas'ev, VV

Pensl, G

Schulz, M

机构：

[1] Univ Erlangen Nurnberg, Inst Appl Phys, D-91058 Erlangen, Germany

[2] Katholieke Univ Leuven, Lab Semicond Phys, B-3001 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00382-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

6H-SiC MOS capacitors were operated at temperatures above 600K under negative bias. Enhancement of energetically shallow and deep interface states at n/p-type SiC/SiO2 structures and of a fixed charge are observed, which can partially be passivated by a hydrogen treatment. The generation and passivation of the fixed charge is explained in the framework of the "negative-bias-temperature instability" originally proposed for Si-based MOS capacitors.

引用

页码：257 / 260

页数：4

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