High field and high temperature stress of n-SiC MOS capacitors

被引：4

作者：

Bano, E ^{[1
]}

Ouisse, T ^{[1
]}

Leonhard, C ^{[1
]}

Golz, A ^{[1
]}

VonKamienski, EGS ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,LEHRSTUHL 2,D-52074 AACHEN,GERMANY

来源：

关键词：

silicon carbide; metal-oxide-semiconductor; impact-ionization; Fowler-Nordheim injection;

D O I：

10.1016/S0925-9635(97)00061-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The development of reliable oxides built on SiC has become a very important issue with respect to either passivation processes or metal-oxide-semiconductor (MOS) applications. The aim of this paper is to present a detailed investigation of Fowler-Nordheim electron injections in n-type silicon carbide (SiC) MOS capacitors. A systematic variation in the temperature and in the average oxide held E-OX applied during the stress allowed us to evidence both a positive charge and electron trapping. The positive charge build-up is shown to emerge above a threshold field close to 7 MV cm(-1). It decreases with temperature, and can be dissociated into two different exponential time processes. The overall results agree with mechanisms based on impact ionization in the oxide, leading to pair creation and subsequent hole trapping. (C) 1997 Elsevier Science S.A.

引用

页码：1489 / 1493

页数：5

共 17 条

[1] CHARGE TRAPPING AND INTERFACE STATE GENERATION IN 6H-SIC MOS STRUCTURES [J].

AFANAS'EV, VV ;

BASSLER, M ;

PENSL, G ;

SCHULZ, MJ .

MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) :197-200

[2] ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE [J].

ALOK, D ;

MCLARTY, PK ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2177-2178

[3] SURFACE-POTENTIAL FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON DIFFERENT SILICON-CARBIDE POLYTYPES [J].

BANO, E ;

OUISSE, T ;

DICIOCCIO, L ;

KARMANN, S .

APPLIED PHYSICS LETTERS, 1994, 65 (21) :2723-2724

[4]

Bano E, 1996, INST PHYS CONF SER, V142, P729

[5] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[6] IMPACT IONIZATION AND POSITIVE CHARGE FORMATION IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

ARNOLD, D ;

CARTIER, E .

APPLIED PHYSICS LETTERS, 1992, 60 (17) :2118-2120

[7] IMPACT IONIZATION, TRAP CREATION, DEGRADATION, AND BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

DIMARIA, DJ ;

CARTIER, E ;

ARNOLD, D .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3367-3384

[8] LOW-FREQUENCY, HIGH-TEMPERATURE CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON METAL-OXIDE-SILICON CARBIDE CAPACITORS [J].

OUISSE, T ;

BECOURT, N ;

JAUSSAUD, C ;

TEMPLIER, F .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :604-607

[9] Electron localization and noise in silicon carbide inversion layers [J].

Ouisse, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1996, 73 (02) :325-337

[10] EXPERIMENTAL-EVIDENCE FOR THE EXISTENCE OF A MOBILITY EDGE IN SILICON-CARBIDE INVERSION-LAYERS [J].

OUISSE, T ;

BILLON, T .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1995, 71 (03) :413-426

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