Study of CIGS/In(OH)xSy heterojunctions

被引：6

作者：

Bayón, R

Maffiotte, C

Herrero, J

机构：

[1] CIEMAT, Dept Energias Renovables, E-28040 Madrid, Spain

[2] CIEMAT, Dept Fus Nucl, E-28040 Madrid, Spain

来源：

THIN SOLID FILMS | 2002年 / 403卷

关键词：

chemical bath deposition; cd-free buffer layer; heterojunction;

D O I：

10.1016/S0040-6090(01)01513-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In(OH)(x)S-y buffer layers have been deposited on glass/Mo/CIGS substrates. Composition, reflectance and morphology of those heterojunctions have been studied. The XPS results have shown that the CIGS substrate does not influence the buffer layer composition, which only depends on deposition conditions. Nevertheless, strong variations of CIGS total reflectance take place after the deposition of this buffer layer. It has been also observed that the In(OH)(x)S-y layer shapes the CIGS substrate and totally covers its surface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：339 / 343

页数：5

共 8 条

[1] Structure and morphology of the indium hydroxy sulphide thin films [J].