Microstructure, ferromagnetism, and magnetic transport of Ti1-xCoxO2 amorphous magnetic semiconductor

被引：39

作者：

Song, Hong-Qiang ^{[1
]}

Mei, Liang-Mo

Yan, Shi-Shen

Ma, Xiu-Liang

Liu, Jia-Ping

Wang, Yong

Zhang, Ze

机构：

[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China

[2] Shandong Univ, Natl Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China

[4] Univ Texas, Dept Phys, Arlington, TX 76019 USA

[5] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 12期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2204758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2-based magnetic semiconductors with high Co doping concentrations (Ti1-xCoxO2) were synthesized under thermal nonequilibrium condition by sputtering machine. Microstructure and composition analysis by transmission electron microscopy, x-ray photoelectron spectroscopy, and electron energy-loss spectroscopy indicated that Co element was incorporated into TiO2 to form Ti1-xCoxO2 compound. The direct evidence for the compositional inhomogeneity of the Ti1-xCoxO2 compound was given. Room temperature ferromagnetism with high magnetization was obtained, which could be attributed to the intrinsic properties of the amorphous magnetic semiconductor. The electrical transport in a low temperature range was explained by spin-dependent Efros's variable range hopping, and correspondingly an exponential function of the magnetoresistance versus T-1/2 was found. (c) 2006 American Institute of Physics.

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