Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors

被引:125
作者
Kang, JS [1 ]
Kim, G
Wi, SC
Lee, SS
Choi, S
Cho, S
Han, SW
Kim, KH
Song, HJ
Shin, HJ
Sekiyama, A
Kasai, S
Suga, S
Min, BI
机构
[1] Catholic Univ Korea, Dept Phys, Puchon 420743, South Korea
[2] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[3] Gyeongsang Natl Univ, Dept Phys, Chinju 660701, South Korea
[4] POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea
[5] Osaka Univ, Grad Sch Engn Sci, Dept Mat Phys, Osaka 5608531, Japan
[6] POSTECH, Dept Phys, Pohang 790784, South Korea
关键词
D O I
10.1103/PhysRevLett.94.147202
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have investigated the chemical distributions and the local electronic structure of potential diluted magnetic semiconductor Ge0.94Mn0.06 single crystals using scanning photoelectron microscopy (SPEM), x-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). The SPEM image shows the stripe-shaped microstructures, which arise from the chemical phase separation between the Mn-rich and Mn-depleted phases. The Mn 2p XAS shows that the Mn ions in the Mn-rich region are in the divalent high-spin Mn2+ states but that they do not form metallic Mn clusters. The Mn 3d PES spectrum exhibits a peak centered at similar to 4 eV below E-F and the negligible spectral weight near E-F. This study suggests that the observed ferromagnetism in Ge1-xMnx arises from the phase-separated Mn-rich phase.
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页数:4
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