Toward room temperature ferromagnetism of Ge:Mn systems

被引:22
作者
D'Orazio, F
Lucari, F
Pinto, N
Morresi, L
Murri, R
机构
[1] Univ Aquila, Dipartimento Fis, INFM, I-67010 Coppito, Italy
[2] Univ Camerino, Dipartimento Fis, INFM, I-62032 Camerino, MC, Italy
关键词
DMS; MOKE; Ge : Mn;
D O I
10.1016/j.jmmm.2004.01.014
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the magnetic properties of MnxGe1-x/Ge(100) films. We show that the choice of growth temperature and Mn content is crucial for achieving optimal magnetic performance. With a substrate temperature of 160degreesC during film deposition, and Mn concentration between 2.7% and 4.4%, hysteresis is observed up to about 250 K. However, the magnetic loop maintains a saturating behaviour at high fields up to room temperature. For larger Mn concentrations the magnetic response is strongly suppressed, suggesting a possible segregation of manganese. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:2006 / 2007
页数:2
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