Growth and magnetic properties of MnGe films for spintronic application

被引:14
作者
Pinto, N
Morresi, L
Gunnella, R
Murri, R
D'Orazio, F
Lucari, F
Santucci, S
Picozzi, P
Passacantando, M
Verna, A
机构
[1] Univ Camerino, Dept Phys, INFM, I-62032 Camerino, Italy
[2] Univ Aquila, Dept Phys, INFM, I-67010 Coppito, Italy
关键词
D O I
10.1023/A:1023932213738
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Morphological and magnetic properties of MnxGe1-x films have been investigated by scanning tunneling microscopy (STM) and magneto-optical Kerr effect (MOKE) measurements, respectively. Several MnxGe1-x alloys were grown by molecular beam epitaxy (MBE) on Ge(100) substrates, varying the growth temperature and alloy composition (x). STM analysis demonstrated island morphology with islands having a mean dimension ranging from about 100 to 130 nm, depending on the substrate temperature and Mn content in the film. Growth conditions also influence the island distribution. MOKE analysis, carried out on all the MnxGe1-x alloys, showed only a negligible hysteresis effect in the investigated temperature range from about 12 to 300 K. At low temperatures (below 70-110 K, depending on the sample), the MOKE signal tends to saturate at a magnetic field intensity less than about 0.5 T, indicating a superparamagnetic behavior. On the contrary, above that temperature the films do not show a magnetic character. The features of the MOKE curves depend on the growth parameters. (C) 2003 Kluwer Academic Publishers.
引用
收藏
页码:337 / 340
页数:4
相关论文
共 20 条
[1]   Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb [J].
Abe, E ;
Matsukura, F ;
Yasuda, H ;
Ohno, Y ;
Ohno, H .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4) :981-985
[2]   New Ge substrate cleaning method for Si1-x-yGexCy MOMBE growth [J].
Akane, T ;
Okumura, H ;
Tanaka, J ;
Matsumoto, S .
THIN SOLID FILMS, 1997, 294 (1-2) :153-156
[3]   Magnetooptical study of Mn ions implanted in Ge [J].
D'Orazio, F ;
Lucari, F ;
Passacantando, M ;
Picozzi, P ;
Santucci, S ;
Verna, A .
IEEE TRANSACTIONS ON MAGNETICS, 2002, 38 (05) :2856-2858
[4]   QUANTUM COMPUTATION [J].
DIVINCENZO, DP .
SCIENCE, 1995, 270 (5234) :255-261
[5]  
FURDYNA JK, 1988, J APPL PHYS, V64, P29
[6]   Spin coherence in semiconductor quantum dots [J].
Gupta, JA ;
Awschalom, DD ;
Peng, X ;
Alivisatos, AP .
PHYSICAL REVIEW B, 1999, 59 (16) :10421-10424
[7]   Observation of spin injection at a ferromagnet-semiconductor interface [J].
Hammar, PR ;
Bennett, BR ;
Yang, MJ ;
Johnson, M .
PHYSICAL REVIEW LETTERS, 1999, 83 (01) :203-206
[8]   Lateral drag of spin coherence in gallium arsenide [J].
Kikkawa, JM ;
Awschalom, DD .
NATURE, 1999, 397 (6715) :139-141
[9]   Resonant spin amplification in n-type GaAs [J].
Kikkawa, JM ;
Awschalom, DD .
PHYSICAL REVIEW LETTERS, 1998, 80 (19) :4313-4316
[10]   Quantum computation with quantum dots [J].
Loss, D ;
DiVincenzo, DP .
PHYSICAL REVIEW A, 1998, 57 (01) :120-126