Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb

被引：70

作者：

Abe, E ^{[1
]}

Matsukura, F ^{[1
]}

Yasuda, H ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期

基金：

日本学术振兴会;

关键词：

molecular beam epitaxy; diluted magnetic semiconductor; III-V compound; spin; magnetotransport; (Ga; Mn)Sb; GaSb;

D O I：

10.1016/S1386-9477(00)00100-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

(Ga,Mn)Sb with a few percent order of Mn was grown by molecular beam epitaxy. Two growth temperature ranges were studied; one is normal growth temperature of GaSb (similar to 560 degrees C) and the other is low temperature (250 degrees C or 300 degrees C). The properties of samples grown at these two growth temperatures were investigated by in situ reflection high-energy electron diffraction, atomic force microscopy, magnetization, and magnetotransport measurements. The results suggest the coexistence of two magnetic phases, (Ga,Mn)Sb and MnSb, for the samples grown at low temperature, whereas MnSb phase is dominant for the samples grown at high temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：981 / 985

页数：5

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