GASB SINGLE-CRYSTALS DOPED WITH MANGANESE

被引：14

作者：

SESTAKOVA, V

HUBIK, P

STEPANEK, B

KRISTOFIK, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90281-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[111] GaSb single crystals doped with manganese were grown using the Czochralski method without encapsulant in a reducing atmosphere of flowing hydrogen. Using the Mn concentrations calculated from the Hall measurement, the distribution coefficient (k(eff)) of manganese in GaSb was estimated to be k(eff) = 0.011 +/- 0.001. The dislocation density, which increases along the growth direction, has also been found to be in contrast to other nonvolatile dopants in Gasb.

引用

页码：345 / 347

页数：3

共 13 条

[1] CHEVALLIER J, 1992, MATER SCI FORUM, V83, P539, DOI 10.4028/www.scientific.net/MSF.83-87.539
[2] VERTICAL GRADIENT FREEZE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GASB SINGLE-CRYSTALS
GARANDET, JP
DUFFAR, T
FAVIER, JJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 96 (04) : 888 - 898
[3] GEORGITSE EI, 1991, FIZ TEKH POLUPROV, V25, P1589
[4] HURLE DTJ, 1973, CRYSTAL GROWTH INTRO, P225
[5] LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB
JAKOWETZ, W
RUHLE, W
BREUNINGER, K
PILKUHN, M
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 169 - +
[6] HOLE IONIZATION OF MN-DOPED GAAS - PHOTOLUMINESCENCE VERSUS SPACE-CHARGE TECHNIQUES
MONTELIUS, L
NILSSON, S
SAMUELSON, L
[J]. PHYSICAL REVIEW B, 1989, 40 (08): : 5598 - 5601
[7] CRYSTAL-GROWTH AND DISLOCATION-STRUCTURE OF GALLIUM ANTIMONIDE
MORAVEC, F
SESTAKOVA, V
STEPANEK, B
CHARVAT, V
[J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1989, 24 (03) : 275 - 281
[8] LEC GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS WITH UNIFORM CARRIER CONCENTRATION DISTRIBUTION
OHMORI, Y
SUGII, K
AKAI, S
MATSUMOTO, K
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (01) : 79 - 85
[9] HYDROGEN TREATMENT EFFECT ON SHALLOW AND DEEP CENTERS IN GASB
POLYAKOV, AY
PEARTON, SJ
WILSON, RG
RAICHOUDHURY, P
HILLARD, RJ
BAO, XJ
STAM, M
MILNES, AG
SCHLESINGER, TE
LOPATA, J
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1318 - 1320
[10] STUDY OF DISLOCATION DENSITY IN TE-DOPED GASB SINGLE-CRYSTALS GROWN BY MEANS OF CZOCHRALSKI TECHNIQUE
SESTAKOVA, V
STEPANEK, B
[J]. THERMOCHIMICA ACTA, 1992, 209 : 277 - 284

← 1 2 →