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VERTICAL GRADIENT FREEZE GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GASB SINGLE-CRYSTALS
被引:35
作者
:
GARANDET, JP
论文数:
0
引用数:
0
h-index:
0
GARANDET, JP
DUFFAR, T
论文数:
0
引用数:
0
h-index:
0
DUFFAR, T
FAVIER, JJ
论文数:
0
引用数:
0
h-index:
0
FAVIER, JJ
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1989年
/ 96卷
/ 04期
关键词
:
D O I
:
10.1016/0022-0248(89)90649-0
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:888 / 898
页数:11
相关论文
共 21 条
[1]
Allegre J., 1970, Crystal Lattice Defects, V1, P343
[2]
GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
BENZ, KW
MULLER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
MULLER, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(01)
: 35
-
42
[3]
ELIMINATION OF DISLOCATIONS IN BULK GAAS CRYSTALS GROWN BY LIQUID-PHASE ELECTROEPITAXY
BOUCHER, CF
论文数:
0
引用数:
0
h-index:
0
BOUCHER, CF
UEDA, O
论文数:
0
引用数:
0
h-index:
0
UEDA, O
BRYSKIEWICZ, T
论文数:
0
引用数:
0
h-index:
0
BRYSKIEWICZ, T
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
[J].
JOURNAL OF APPLIED PHYSICS,
1987,
61
(01)
: 359
-
364
[4]
INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
ETTER, PJ
论文数:
0
引用数:
0
h-index:
0
ETTER, PJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(05)
: 451
-
&
[5]
ON THE THERMAL-STRESSES IN VERTICAL GRADIENT FREEZE FURNACES
GARANDET, JP
论文数:
0
引用数:
0
h-index:
0
GARANDET, JP
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
96
(03)
: 680
-
684
[6]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
: 427
-
433
[7]
A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS
GAULT, WA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
GAULT, WA
MONBERG, EM
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
MONBERG, EM
CLEMANS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
CLEMANS, JE
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
: 491
-
506
[8]
AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
JORDAN, AS
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(04)
: 631
-
642
[9]
JORDAN AS, 1986, J CRYST GROWTH, V76, P243
[10]
LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(01)
: 39
-
44
←
1
2
3
→
共 21 条
[1]
Allegre J., 1970, Crystal Lattice Defects, V1, P343
[2]
GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
BENZ, KW
MULLER, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
MULLER, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1979,
46
(01)
: 35
-
42
[3]
ELIMINATION OF DISLOCATIONS IN BULK GAAS CRYSTALS GROWN BY LIQUID-PHASE ELECTROEPITAXY
BOUCHER, CF
论文数:
0
引用数:
0
h-index:
0
BOUCHER, CF
UEDA, O
论文数:
0
引用数:
0
h-index:
0
UEDA, O
BRYSKIEWICZ, T
论文数:
0
引用数:
0
h-index:
0
BRYSKIEWICZ, T
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
LAGOWSKI, J
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
[J].
JOURNAL OF APPLIED PHYSICS,
1987,
61
(01)
: 359
-
364
[4]
INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB
EFFER, D
论文数:
0
引用数:
0
h-index:
0
EFFER, D
ETTER, PJ
论文数:
0
引用数:
0
h-index:
0
ETTER, PJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1964,
25
(05)
: 451
-
&
[5]
ON THE THERMAL-STRESSES IN VERTICAL GRADIENT FREEZE FURNACES
GARANDET, JP
论文数:
0
引用数:
0
h-index:
0
GARANDET, JP
[J].
JOURNAL OF CRYSTAL GROWTH,
1989,
96
(03)
: 680
-
684
[6]
CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
GATOS, HC
LAVINE, MC
论文数:
0
引用数:
0
h-index:
0
LAVINE, MC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1960,
107
(05)
: 427
-
433
[7]
A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS
GAULT, WA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
GAULT, WA
MONBERG, EM
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
MONBERG, EM
CLEMANS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
CLEMANS, JE
[J].
JOURNAL OF CRYSTAL GROWTH,
1986,
74
(03)
: 491
-
506
[8]
AN EVALUATION OF THE THERMAL AND ELASTIC-CONSTANTS AFFECTING GAAS CRYSTAL-GROWTH
JORDAN, AS
论文数:
0
引用数:
0
h-index:
0
JORDAN, AS
[J].
JOURNAL OF CRYSTAL GROWTH,
1980,
49
(04)
: 631
-
642
[9]
JORDAN AS, 1986, J CRYST GROWTH, V76, P243
[10]
LOW DISLOCATION DENSITY GASB SINGLE-CRYSTALS GROWN BY LEC TECHNIQUE
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
MIYAZAWA, S
论文数:
0
引用数:
0
h-index:
0
MIYAZAWA, S
[J].
JOURNAL OF CRYSTAL GROWTH,
1982,
56
(01)
: 39
-
44
←
1
2
3
→