ELIMINATION OF DISLOCATIONS IN BULK GAAS CRYSTALS GROWN BY LIQUID-PHASE ELECTROEPITAXY

被引：22

作者：

BOUCHER, CF

UEDA, O

BRYSKIEWICZ, T

LAGOWSKI, J

GATOS, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：359 / 364

页数：6

共 20 条

[1] GASB AND INSB CRYSTALS GROWN BY VERTICAL AND HORIZONTAL TRAVELING HEATER METHOD [J].

BENZ, KW ;

MULLER, G .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :35-42

[2]

BOUCHER C, UNPUB

[3]

Bublik V. T., 1973, Soviet Physics - Crystallography, V18, P218

[4] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].

GRABMAIER, JG ;

WATSON, CB .

PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+

[5] REVISED CALCULATION OF POINT-DEFECT EQUILIBRIA AND NONSTOICHIOMETRY IN GALLIUM-ARSENIDE [J].

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1979, 40 (08) :613-626

[6]

ISHII M, 1986, JPN J APPL PHYS, V15, P645

[7] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].

JACOB, G ;

DUSEAUX, M ;

FARGES, JP ;

VANDENBOOM, MMB ;

ROKSNOER, PJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424

[8] LIQUID-PHASE ELECTROEPITAXY - GROWTH KINETICS [J].

JASTRZEBSKI, L ;

LAGOWSKI, J ;

GATOS, HC ;

WITT, AF .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5909-5919

[9] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[10] CRYSTAL-GROWTH OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS [J].

KOHDA, H ;

YAMADA, K ;

NAKANISHI, H ;

KOBAYASHI, T ;

OSAKA, J ;

HOSHIKAWA, K .

JOURNAL OF CRYSTAL GROWTH, 1985, 71 (03) :813-816

← 1 2 →