DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING

被引：137

作者：

JACOB, G ^{[1
]}

DUSEAUX, M ^{[1
]}

FARGES, JP ^{[1
]}

VANDENBOOM, MMB ^{[1
]}

ROKSNOER, PJ ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 02期

关键词：

D O I：

10.1016/0022-0248(83)90383-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：417 / 424

页数：8

相关论文

共 12 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] THE GROWTH OF DISLOCATION-FREE GE-DOPED INP
BROWN, GT
COCKAYNE, B
MACEWAN, WR
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) : 369 - 372
[3] HOLLAN L, 1980, CURRENT TOPICS MATER, V5
[4] GROWTH OF DISLOCATION-FREE GAAS CRYSTALS BY NITROGEN DOPING
JACOB, G
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) : 669 - 671
[5] JACOB G, 1982, 2ND P INT C SEM 3 5
[6] JACOB G, 1982, J CRYST GROWTH, V57, P493
[7] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF MICRODEFECTS IN DISLOCATION-FREE GAAS AND INP CRYSTALS
KAMEJIMA, T
MATSUI, J
SEKI, Y
WATANABE, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3312 - 3321
[8] EFFECT OF DOPING ON FORMATION OF DISLOCATION-STRUCTURE IN SEMICONDUCTOR CRYSTALS
MILVIDSKY, MG
OSVENSKY, VB
SHIFRIN, SS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 396 - 403
[9] MIRCEAROUSSEL A, COMMUNICATION
[10] ROKSNOER PJ, COMMUNICATION