CRYSTAL-GROWTH OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : K13 - +

[3] HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L37 - L39

[4] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547

[5] HYUGA F, COMMUNICATION

[6] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 417 - 424

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[9] NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63

[10] HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L195 - L197

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &

[2] DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : K13 - +

[3] HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01): : L37 - L39

[4] CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09): : L545 - L547

[5] HYUGA F, COMMUNICATION

[6] DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) : 417 - 424

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855

[9] NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63

[10] HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04): : L195 - L197