Magnetooptical study of Mn ions implanted in Ge

被引：27

作者：

D'Orazio, F ^{[1
]}

Lucari, F

Passacantando, M

Picozzi, P

Santucci, S

Verna, A

机构：

[1] Univ Aquila, Ist Nazl Fis Mat, I-67010 Laquila, Italy

[2] Univ Aquila, Dipartimento Fis, I-67010 Laquila, Italy

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2002年 / 38卷 / 05期

关键词：

ion implantation; Kerr effect; magnetic impurities; magnetic semiconductors; superparamagnetism;

D O I：

10.1109/TMAG.2002.802859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion-implanted manganese impurities in germanium is investigated by means of the Kerr effect rotation. annealing, a magnetic cycle with a coercive field 3000 Oe is observed at about 10 K. The hysteresis disappears just, below room temperature. The magnetic analysis, supported by structural characterization, suggests that particles rich in Mn are formed within the Ge matrix during implantation.

引用

页码：2856 / 2858

页数：3