A group-IV ferromagnetic semiconductor:: MnxGe1-x

被引：802

作者：

Park, YD ^{[1
]}

Hanbicki, AT ^{[1
]}

Erwin, SC ^{[1
]}

Hellberg, CS ^{[1
]}

Sullivan, JM ^{[1
]}

Mattson, JE ^{[1
]}

Ambrose, TF ^{[1
]}

Wilson, A ^{[1
]}

Spanos, G ^{[1
]}

Jonker, BT ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

SCIENCE | 2002年 / 295卷 / 5555期

关键词：

D O I：

10.1126/science.1066348

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, MnxGe1-x, in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p-type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a +/-0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a tong-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.

引用

页码：651 / 654

页数：4

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