Ferromagnetism in magnetically doped III-V semiconductors

被引：207

作者：

Litvinov, VI

Dugaev, VK

机构：

[1] WaveBand Corp, Torrance, CA 90501 USA

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle An Der Saale, Germany

[3] Ukrainian Acad Sci, Inst Mat Sci Problems, UA-58001 Chernovtsy, Ukraine

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.86.5593

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations from magnetic impurity acceptor levels to the valence band can explain ferromagnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formation of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict the Mn-composition dependence of transition temperature in wurtzite (Ga,In,AI)N epitaxial layers.

引用

页码：5593 / 5596

页数：4

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