Magnetic ordering in GaAlAs:Mn double well structure

被引：11

作者：

Boselli, MA

Lima, ICD

Ghazali, A

机构：

[1] Unis Estado Rio de Janeiro, Inst Fis, BR-22500013 Rio De Janeiro, Brazil

[2] Univ Paris 07, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France

[3] Univ Paris 06, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France

[4] Univ Paris, Phys Solides Grp, CNRS, UMR 7588, F-75251 Paris 05, France

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.372731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs:Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration, a ferromagnetic or a spin-glass order can be established. (C) 2000 American Institute of Physics. [S0021-8979(00)19308-9].

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页码：6439 / 6441

页数：3

相关论文

共 15 条

[1] Ferromagnetism in a Cd1-xMnxTe double quantum well [J].

Boselli, MA ;

Lima, ICD ;

Ghazali, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5944-5946

[2] Resonant tunneling spin valve: A novel magnetoelectronics device [J].

Bruno, P ;

Wunderlich, J .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) :978-982

[3] A FULLY FRUSTRATED SIMPLE CUBIC LATTICE WITH XY AND HEISENBERG SPINS - GROUND-STATE AND PHASE-TRANSITION [J].

DIEP, HT ;

GHAZALI, A ;

LALLEMAND, P .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (31) :5881-5895

[4] Free carrier-induced ferromagnetism in structures of diluted magnetic semiconductors [J].

Dietl, T ;

Haury, A ;

dAubigne, YM .

PHYSICAL REVIEW B, 1997, 55 (06) :R3347-R3350

[5]

DIETL T, 1994, HDB SEMICONDUCTORS, V3

[6]

Furdyna J. K., 1988, DILUTED MAGNETIC SEM, V25

[7] Hall effect and magnetic properties of III-V based (Ga1-xMnx)As/AlAs magnetic semiconductor superlattices [J].

Hayashi, T ;

Tanaka, M ;

Seto, K ;

Nishinaga, T ;

Shimada, H ;

Ando, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6551-6553

[8] Transport properties and origin of ferromagnetism in (Ga,Mn)As [J].

Matsukura, F ;

Ohno, H ;

Shen, A ;

Sugawara, Y .

PHYSICAL REVIEW B, 1998, 57 (04) :R2037-R2040

[9] Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) [J].

Ohno, H ;

Matsukura, F ;

Omiya, T ;

Akiba, N .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4277-4282

[10] Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy [J].

Ohno, H ;

Akiba, N ;

Matsukura, F ;

Shen, A ;

Ohtani, K ;

Ohno, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (03) :363-365