Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors

被引:68
作者
Iye, Y [1 ]
Oiwa, A
Endo, A
Katsumoto, S
Matsukura, F
Shen, A
Ohno, H
Munekata, H
机构
[1] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 1068666, Japan
[2] Japan Corp Sci & Technol, CREST, Toshima Ku, Tokyo 1710031, Japan
[3] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 63卷 / 1-2期
关键词
diluted magnetic semiconductor; carrier-induced ferromagnetism; anomalous Hall effect; negative magnetoresistance; metal-insulator transition; lattice-mismatch-induced strain;
D O I
10.1016/S0921-5107(99)00057-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structural, magnetic and transport properties of diluted magnetic semiconductors, (Ga, Mn)As and (In, Mn)As, have been investigated. Manganese can be substitutionally doped into the group III site of the zincblend structure up to several percent. With Mn content of a few percent, these systems exhibit ferromagnetism at low temperatures. The highest Curie temperature so far achieved is similar to 100 K for (Ga, Mn)As. The saturated magnetization values are consistent with S = 5/2 local moment, suggesting divalent Mn which acts as an acceptor. The system becomes metallic with increasing Mn content, but a further increase of Mn content tends to decrease the hole density and increase disorder so that the system becomes nonmetallic again at higher Mn concentrations. Large negative magnetoresistance and highly anisotropic transport are observed in the semiconducting samples at low temperatures. The magnetic anisotropy in ultrathin films is found to be strongly affected by the lattice-mismatch-induced strain. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:88 / 95
页数:8
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