Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb

被引：589

作者：

Koshihara, S

Oiwa, A

Hirasawa, M

Katsumoto, S

Iye, Y

Urano, C

Takagi, H

Munekata, H

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, MINATO KU, TOKYO 106, JAPAN

[2] TOKYO INST TECHNOL, IMAGING SCI & ENGN LAB, MIDORI KU, YOKOHAMA, KANAGAWA 226, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.78.4617

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the inducement of a ferromagnetic order by photogenerated carriers in a novel III-V-based magnetic semiconductor heterostructure p-(In,Mn)As/GaSb grown by molecular beam epitaxy. At low temperatures ((35 K), samples preserve ferromagnetic order even-after the light is switched off, whereas they recover their original paramagnetic condition above 35 K. The results are explained in terms of hole transfer from GaSb to InMnAs in the heterostructure, which enhances a ferromagnetic spin exchange among Mn ions in the InMnAs layer.

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页码：4617 / 4620

页数：4

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