NEGATIVE PERSISTENT PHOTOCONDUCTIVITY IN THE AL0.6GA0.4SB/INAS QUANTUM-WELLS

被引：49

作者：

LO, I ^{[1
]}

MITCHEL, WC ^{[1
]}

MANASREH, MO ^{[1
]}

STUTZ, CE ^{[1
]}

EVANS, KR ^{[1
]}

机构：

[1] WRIGHT LAB,ELRA,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 06期

关键词：

D O I：

10.1063/1.106558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the Shubnikov-de Haas (SdH) effect in the Al0.6Ga0.4Sb/InAs quantum wells under the negative persistent photoconductivity (NPPC) conductions. By illuminating the sample at low-temperature, the carrier concentration of the two-dimensional electron gas in the InAs well was reduced from 5.8 to 3.6 X 10(11) cm-2 and the corresponding quantum lifetime increases from 0.16 to 0.21 ps. The electrons which escaped from the InAs well were captured by the ionized deep donors in the Al0.6Ga0.4Sb layers. The effective mass is equal to (0.0317 +/- 0.0005)m0. We also propose, based on the SdH data, that the illumination of the sample with the ionized deep donors at low temperature will exhibit the NPPC effect.

引用

收藏

页码：751 / 753

页数：3

相关论文

共 18 条

[1] EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J].

CASWELL, NS ;

MOONEY, PM ;

WRIGHT, SL ;

SOLOMON, PM .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1093-1095

[2] LOW-FIELD TRANSPORT-COEFFICIENTS IN GAAS/GA1-XALXAS HETEROSTRUCTURES [J].

COLERIDGE, PT ;

STONER, R ;

FLETCHER, R .

PHYSICAL REVIEW B, 1989, 39 (02) :1120-1124

[3] EFFECTIVE MASS AND COLLISION TIME OF (100) SI SURFACE ELECTRONS [J].

FANG, FF ;

FOWLER, AB ;

HARTSTEIN, A .

PHYSICAL REVIEW B, 1977, 16 (10) :4446-4454

[4] LANDAU-LEVEL BROADENING AND SCATTERING TIME IN MODULATION DOPED GAAS/ALGAAS HETEROSTRUCTURES [J].

FANG, FF ;

SMITH, TP ;

WRIGHT, SL .

SURFACE SCIENCE, 1988, 196 (1-3) :310-315

[5] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J].

HIRAKAWA, K ;

SAKAKI, H .

PHYSICAL REVIEW B, 1986, 33 (12) :8291-8303

[6] QUANTUM HALL-EFFECT IN INAS/ALSB QUANTUM-WELLS [J].

HOPKINS, PF ;

RIMBERG, AJ ;

WESTERVELT, RM ;

TUTTLE, G ;

KROEMER, H .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1428-1430

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[8] 2-DIMENSIONAL ELECTRON-GAS IN GAAS/AL1-XGAXAS HETEROSTRUCTURES - EFFECTIVE MASS [J].

LO, I ;

MITCHEL, WC ;

PERRIN, RE ;

MESSHAM, RL ;

YEN, MY .

PHYSICAL REVIEW B, 1991, 43 (14) :11787-11790

[9] HETEROJUNCTION FIELD-EFFECT TRANSISTORS BASED ON ALGASB/INAS [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI ;

MUNEKATA, H .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :789-791

[10] DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS [J].

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :R1-R26