HETEROJUNCTION FIELD-EFFECT TRANSISTORS BASED ON ALGASB/INAS

被引：50

作者：

LUO, LF

BERESFORD, R

WANG, WI

MUNEKATA, H

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.101761

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：789 / 791

页数：3

共 16 条

[1] PERFORMANCE OF A QUARTER-MICROMETER-GATE BALLISTIC ELECTRON HEMT
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[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) : 451 - 453
[2] NEGATIVE DIFFERENTIAL RESISTANCE IN ALGASB/INAS SINGLE-BARRIER HETEROSTRUCTURES AT ROOM-TEMPERATURE
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[J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1899 - 1901
[3] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS
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[4] COMPARATIVE POTENTIAL PERFORMANCE OF SI, GAAS, GAINAS, INAS SUBMICROMETER-GATE FETS
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[6] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY
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[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1037 - 1039
[7] BAND OFFSETS AT HETEROINTERFACES - THEORETICAL BASIS, AND REVIEW, OF RECENT EXPERIMENTAL WORK
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[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 299 - 306
[8] ROOM-TEMPERATURE OPERATION OF HOT-ELECTRON TRANSISTORS
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 984 - 986
[9] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES
LUO, LF
BERESFORD, R
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2320 - 2322
[10] BAND LINEUPS AT THE GASB-ALXGA1-XSB HETERO-JUNCTION - EXPERIMENTAL-EVIDENCE FOR A NEW COMMON ANION RULE
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[J]. SOLID STATE COMMUNICATIONS, 1987, 61 (11) : 703 - 706

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