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EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS

被引：42
作者：
CASWELL, NS
MOONEY, PM
WRIGHT, SL
SOLOMON, PM
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 16期
关键词：
D O I：
10.1063/1.96608
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1093 / 1095
页数：3
相关论文
共 9 条
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    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146
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  • [9] RESONANT EXCITATION OF BOUND EXCITON LUMINESCENCE IN GAAS1-XPX ALLOYS
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    [J]. SOLID STATE COMMUNICATIONS, 1979, 32 (01) : 51 - 54
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