DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS

[1] GROWTH CONDITION INDEPENDENCE OBSERVED FOR DX CENTER IN SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L883 - L884

[2] AZEMA S, 1989, DEFECTS SEMICONDUCTO, V15, P857

[3] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[4] THE LOCAL-ENVIRONMENT-DEPENDENT DX CENTERS - EVIDENCE FOR THE SINGLE ENERGY-LEVEL WITH A SPECIFIED CONFIGURATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06): : L891 - L894

[5] BABA T, 1983, JPN J APPL PHYS, V23, pL654

[6] ENHANCEMENT OF THE FREE CARRIER DENSITY IN GA1-XALXAS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY UNDER HIGH-TEMPERATURE GROWTH-CONDITIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : K41 - K45

[7] BASMAJI P, 1988, IOP C P, V91, P223

[8] MATERIAL AND DEVICE CONSIDERATIONS FOR CASCADE SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 822 - 831

[9] BHATTACHARYA PK, 1979, I PHYS C SER, V45, P199

[10] EPR STUDIES ON A1XGA1-XAS MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01): : K23 - K26

[1] GROWTH CONDITION INDEPENDENCE OBSERVED FOR DX CENTER IN SI-DOPED ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (11): : L883 - L884

[2] AZEMA S, 1989, DEFECTS SEMICONDUCTO, V15, P857

[3] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[4] THE LOCAL-ENVIRONMENT-DEPENDENT DX CENTERS - EVIDENCE FOR THE SINGLE ENERGY-LEVEL WITH A SPECIFIED CONFIGURATION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (06): : L891 - L894

[5] BABA T, 1983, JPN J APPL PHYS, V23, pL654

[6] ENHANCEMENT OF THE FREE CARRIER DENSITY IN GA1-XALXAS GROWN BY METALLORGANIC VAPOR-PHASE EPITAXY UNDER HIGH-TEMPERATURE GROWTH-CONDITIONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : K41 - K45

[7] BASMAJI P, 1988, IOP C P, V91, P223

[8] MATERIAL AND DEVICE CONSIDERATIONS FOR CASCADE SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 822 - 831

[9] BHATTACHARYA PK, 1979, I PHYS C SER, V45, P199

[10] EPR STUDIES ON A1XGA1-XAS MIXED-CRYSTALS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01): : K23 - K26