THE LOCAL-ENVIRONMENT-DEPENDENT DX CENTERS - EVIDENCE FOR THE SINGLE ENERGY-LEVEL WITH A SPECIFIED CONFIGURATION

被引：75

作者：

BABA, T ^{[1
]}

MIZUTA, M ^{[1
]}

FUJISAWA, T ^{[1
]}

YOSHINO, J ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 06期

关键词：

D O I：

10.1143/JJAP.28.L891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L891 / L894

页数：4

共 14 条

[1] SHALLOW-DEEP INSTABILITY OF DONOR IMPURITY STATES IN AL-GA-AS SYSTEM AND ITS CONTROL BY SUPERLATTICE STRUCTURE [J].

BABA, T ;

OGAWA, M ;

MIZUTANI, T .

SURFACE SCIENCE, 1986, 174 (1-3) :408-419

[2] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].

BABA, T ;

MIZUTANI, T ;

OGAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629

[3] PHYSICAL MEANING OF ELECTRON-CAPTURE KINETICS ON DX CENTERS [J].

BOURGOIN, JC ;

FENG, SL ;

VONBARDELEBEN, HJ .

APPLIED PHYSICS LETTERS, 1988, 53 (19) :1841-1843

[4] FINE-STRUCTURE OF THE ALLOY-BROADENED THERMAL EMISSION-SPECTRA FROM DX CENTERS IN GAALAS [J].

CALLEJA, E ;

GOMEZ, A ;

MUNOZ, E ;

CAMARA, P .

APPLIED PHYSICS LETTERS, 1988, 52 (22) :1877-1879

[5] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[6] PHOTOCAPACITANCE STUDY OF PRESSURE-INDUCED DEEP DONORS IN GAAS-SI [J].

LI, MF ;

YU, PY ;

WEBER, ER ;

HANSEN, W .

PHYSICAL REVIEW B, 1987, 36 (08) :4531-4534

[7] INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS [J].

MAUDE, DK ;

PORTAL, JC ;

DMOWSKI, L ;

FOSTER, T ;

EAVES, L ;

NATHAN, M ;

HEIBLUM, M ;

HARRIS, JJ ;

BEALL, RB .

PHYSICAL REVIEW LETTERS, 1987, 59 (07) :815-818

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

[9] EFFECT OF LOCAL ALLOY DISORDER ON EMISSION KINETICS OF DEEP DONORS (DX CENTERS) IN ALXGA1-XAS OF LOW AL CONTENT [J].

MOONEY, PM ;

THEIS, TN ;

WRIGHT, SL .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2546-2548

[10] ALLOY FLUCTUATION EFFECT ON ELECTRONIC-TRANSITION PROPERTIES OF DX CENTER OBSERVED WITH MODIFIED DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

TAKIKAWA, M ;

OZEKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (03) :303-310

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