INVESTIGATION OF THE DX CENTER IN HEAVILY DOPED N-TYPE GAAS

被引：120

作者：

MAUDE, DK

PORTAL, JC

DMOWSKI, L

FOSTER, T

EAVES, L

NATHAN, M

HEIBLUM, M

HARRIS, JJ

BEALL, RB

机构：

[1] INST NATL SCI APPL LYON,DEPT GENIE PHYS,F-31077 TOULOUSE,FRANCE

[2] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[4] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.59.815

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：815 / 818

页数：4

相关论文

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