MECHANISM OF COMPENSATION IN HEAVILY SILICON-DOPED GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY

被引：115

作者：

MAGUIRE, J

MURRAY, R

NEWMAN, RC

BEALL, RB

HARRIS, JJ

机构：

[1] JJ THOMSON PHYS LAB,READING,BERKS,ENGLAND

[2] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.98265

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：516 / 518

页数：3

相关论文

共 21 条

[1] AKIMOTO K, 1983, APPL PHYS LETT, V43, P1062, DOI 10.1063/1.94236
[2] ON THE MECHANISM OF FORMATION ON AS-GAT ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED N-TYPE GAAS
BEALL, RB
MURRAY, R
NEWMAN, RC
WHITEHOUSE, JE
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (25): : L763 - L767
[3] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
WOOD, CEC
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803
[4] GRAINGER F, UNPUB
[5] HEAVY DOPING OF GAAS AND ALGAAS WITH SILICON BY MOLECULAR-BEAM EPITAXY
HEIBLUM, M
WANG, WI
OSTERLING, LE
DELINE, V
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6751 - 6753
[6] QUANTITATIVE INORGANIC ANALYSIS BY Q-SWITCHED LASER MASS-SPECTROSCOPY
JANSEN, JAJ
WITMER, AW
[J]. SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1982, 37 (06) : 483 - 491
[7] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS
KIRCHNER, PD
JACKSON, TN
PETTIT, GD
WOODALL, JM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 26 - 28
[8] SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - CHANGES INDUCED BY ANNEALING
KUNG, JK
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4477 - 4486
[9] Lang D. V., 1977, I PHYS C SER, V31, P70
[10] SITE SWITCHING OF SILICON IN NEUTRON-IRRADIATED AND ANNEALED GALLIUM-ARSENIDE BY VACANCY MIGRATION
MAGUIRE, J
NEWMAN, RC
BEALL, RB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (12): : 1897 - 1907