PHYSICAL MEANING OF ELECTRON-CAPTURE KINETICS ON DX CENTERS

[1] PHYSICAL ORIGIN OF THE DX-CENTER [J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 749 - 751

[2] ORIGIN OF THE NONEXPONENTIAL THERMAL EMISSION KINETICS OF DX CENTERS IN GAALAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 657 - 659

[3] DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 383 - 385

[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[5] LANG DV, 1986, DEEP CTR SEMICONDUCT, pCH7

[6] LANNOO MJ, UNPUB

[7] PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7505 - 7510

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146

[9] THE CAPTURE BARRIER OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4786 - 4797

[10] TRANSIENT CAPACITANCE SPECTROSCOPY IN HEAVILY COMPENSATED SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (05) : 485 - 492

[1] PHYSICAL ORIGIN OF THE DX-CENTER [J]. APPLIED PHYSICS LETTERS, 1988, 53 (09) : 749 - 751

[2] ORIGIN OF THE NONEXPONENTIAL THERMAL EMISSION KINETICS OF DX CENTERS IN GAALAS [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 657 - 659

[3] DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 383 - 385

[4] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030

[5] LANG DV, 1986, DEEP CTR SEMICONDUCT, pCH7

[6] LANNOO MJ, UNPUB

[7] PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1987, 35 (14): : 7505 - 7510

[8] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L143 - L146

[9] THE CAPTURE BARRIER OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4786 - 4797

[10] TRANSIENT CAPACITANCE SPECTROSCOPY IN HEAVILY COMPENSATED SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (05) : 485 - 492