DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS

被引：48

作者：

CALLEJA, E

GOMEZ, A

MUNOZ, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 05期

关键词：

D O I：

10.1063/1.99473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：383 / 385

页数：3

共 18 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J].

CAMPHAUSEN, DL ;

CONNELL, GAN ;

PAUL, W .

PHYSICAL REVIEW LETTERS, 1971, 26 (04) :184-+

[3] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[4] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[5] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J].

KOBAYASHI, KLI ;

UCHIDA, Y ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L928-L931

[6] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[7] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS [J].

LEE, HJ ;

JURAVEL, LY ;

WOOLLEY, JC ;

SPRINGTHORPE, AJ .

PHYSICAL REVIEW B, 1980, 21 (02) :659-669

[8] PHOTOIONIZATION CROSS-SECTION OF THE DX CENTER IN SI-DOPED ALXGA1-XAS [J].

LEGROS, R ;

MOONEY, PM ;

WRIGHT, SL .

PHYSICAL REVIEW B, 1987, 35 (14) :7505-7510

[9] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

CARD, HC .

PHYSICAL REVIEW B, 1980, 21 (02) :670-678

[10] DIRECT EVIDENCE FOR THE DX CENTER BEING A SUBSTITUTIONAL DONOR IN ALGAAS ALLOY SYSTEM [J].

MIZUTA, M ;

TACHIKAWA, M ;

KUKIMOTO, H ;

MINOMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02) :L143-L146

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