ORIGIN OF THE NONEXPONENTIAL THERMAL EMISSION KINETICS OF DX CENTERS IN GAALAS

被引:46
作者
CALLEJA, E [1 ]
MOONEY, PM [1 ]
WRIGHT, SL [1 ]
HEIBLUM, M [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.97559
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:657 / 659
页数:3
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共 18 条
[1]   TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX [J].
CALLEJA, E ;
MUNOZ, E ;
JIMENEZ, B ;
GOMEZ, A ;
GARCIA, F ;
KELLERT, F .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5295-5301
[2]   ON THE CARRIER EMISSION FROM DONOR-RELATED CENTERS IN GAAS1-XPX AND ALXGA1-XAS [J].
CALLEJA, E ;
GOMEZ, AI ;
MUNOZ, E .
SOLID-STATE ELECTRONICS, 1986, 29 (01) :83-88
[3]   EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS [J].
CASWELL, NS ;
MOONEY, PM ;
WRIGHT, SL ;
SOLOMON, PM .
APPLIED PHYSICS LETTERS, 1986, 48 (16) :1093-1095
[4]   COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].
CHAND, N ;
HENDERSON, T ;
KLEM, J ;
MASSELINK, WT ;
FISCHER, R ;
CHANG, YC ;
MORKOC, H .
PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492
[5]  
FISHER R, 1984, IEEE T ELECTRON DEV, V31, P1028
[6]   STUDY OF NON-EXPONENTIAL ELECTRON-CAPTURE BY THE MAIN ELECTRON TRAP IN GAAS0.62P0.38 [J].
KANIEWSKA, M ;
KANIEWSKI, J .
SOLID STATE COMMUNICATIONS, 1985, 53 (05) :485-488
[7]   A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J].
KOBAYASHI, KLI ;
UCHIDA, Y ;
NAKASHIMA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L928-L931
[8]   INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KUNZEL, H ;
FISCHER, A ;
KNECHT, J ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02) :69-78
[9]   TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].
LANG, DV ;
LOGAN, RA ;
JAROS, M .
PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030
[10]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639