共 21 条
- [2] DONOR-LEVELS ANALYSIS IN GAAIAS DOUBLE HETEROSTRUCTURE [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 108 - 110
- [6] CALLEJA E, UNPUB J APPL PHYS
- [8] FERENCZI G, 1980, P INT SCH NEW DEV SE, P116
- [9] ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4 [J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 325 - 333
- [10] PREFERENTIAL PRECIPITATION ON DISLOCATION LOOPS IN TE-DOPED GALLIUM-ARSENIDE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (01): : 15 - 23