ON THE CARRIER EMISSION FROM DONOR-RELATED CENTERS IN GAAS1-XPX AND ALXGA1-XAS

被引:14
作者
CALLEJA, E
GOMEZ, AI
MUNOZ, E
机构
[1] ETSI de Telecommunicacion, Dep de, Electronica, Madrid, Spain, ETSI de Telecommunicacion, Dep de Electronica, Madrid, Spain
关键词
Acknowledgements-We thank Dr. Forrest Keller&; HP Opto. Div; for valuable discussions and for providing samples; and A. La Cruz for computational assistance. The present work has been supported by U.S.-Spain Coop. Research Program 793031 and by Comisidn Asesora de Investigation Cientifica y Tecnica; projects; 3864/79; and; 1473/82;
D O I
10.1016/0038-1101(86)90201-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
21
引用
收藏
页码:83 / 88
页数:6
相关论文
共 21 条
  • [1] SULFUR DOPING IN AL0.4GA0.6AS
    ANTHONY, PJ
    ZILKO, JL
    SWAMINATHAN, V
    SCHUMAKER, NE
    WAGNER, WR
    NORBERG, JC
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 434 - 436
  • [2] DONOR-LEVELS ANALYSIS IN GAAIAS DOUBLE HETEROSTRUCTURE
    BALLAND, B
    VINCENT, G
    BOIS, D
    HIRTZ, P
    [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 108 - 110
  • [3] DEEP LEVELS IN LED GAAS-GAALAS
    BALLAND, B
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (05): : 232 - 240
  • [4] SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATION
    BLEICHER, M
    LANGE, E
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 375 - 380
  • [5] ELECTRON TRAPS IN GAAS1-XPX ALLOYS
    CALLEJA, E
    MUNOZ, E
    GARCIA, F
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 528 - 530
  • [6] CALLEJA E, UNPUB J APPL PHYS
  • [7] SULFUR-RELATED TRAP IN GAAS1-XPX
    CRAVEN, RA
    FINN, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6334 - 6343
  • [8] FERENCZI G, 1980, P INT SCH NEW DEV SE, P116
  • [9] ELECTRON TRAP BEHAVIOR IN TE-DOPED GAAS0.6P0.4
    HENNING, ID
    THOMAS, H
    [J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 325 - 333
  • [10] PREFERENTIAL PRECIPITATION ON DISLOCATION LOOPS IN TE-DOPED GALLIUM-ARSENIDE
    HUTCHINSON, PW
    DOBSON, PS
    [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (01): : 15 - 23